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  ret y rt - low forward voltage drop - low power loss, high efficiency - guardring for overvoltage protection - high surge current capability - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free base p/n with prefix "h" on packing code - aec-q101 qualified terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test, with prefix "h" on packing code meet jesd 201 class 2 whisker test v rrm 20 30 40 50 60 90 100 150 200 v v rms 14 21 28 35 42 63 70 105 140 v v dc 20 30 40 50 60 90 100 150 200 v i f(av) a dv/dt v/ s r ja o c/w t j o c t stg o c document number: ds_d1309011 version: i13 sr802 thru sr820 taiwan semiconductor schottk y barrier rectifier feat u res - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec m ech an i cal dat a case: do-201ad do-201ad weight: 1.1 g (approximately) m ax i m u m rat i n gs an d elect ri cal ch aract eri st i cs (t a =25 unless otherwise noted) param et er sy m bol sr 8 0 2 sr 8 0 3 sr 8 0 4 sr 8 0 5 sr 8 0 6 sr 8 0 9 sr 8 1 0 peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm a sr 8 1 5 u n i t maximum repetitive peak reverse voltage maximum rms voltage maximum dc blocking voltage sr 8 2 0 8 v maximum reverse current @ rated vr t j =25 t j =100 t j =125 i r 0.5 ma 15 10 - maximum instantaneous forward voltage (note 1) @ 8 a v f 0.55 0.70 0.92 storage temperature range note 1: pulse test with pw=300 s, 1% duty cycle - 55 to +125 - voltage rate of change (rated v r ) typical thermal resistance - 55 to +150 maximum average forward rectified current - 5 10000 40 - 55 to +150 150 1.02 0.1 operating junction temperature range downloaded from: http:///
ret y rt part n o. part n o. sr806sr806 sr806 (ta=25 unless otherwise noted) document number: ds_d1309011 version: i13 sr802 thru sr820 taiwan semiconductor orderi n g i n form at i on aec-q1 0 1 qu ali fi ed pack i n g code green com pou n d code pack age pack i n g r0 do-201ad 1,250 / 13" paper reel b0 do-201ad 500 / bulk packing x0 do-201ad forming note 1: "xx" defines voltage from 20v (sr802) to 200v (sr820) sr8xx (note 1) prefix "h" a0 suffix "g" do-201ad 500 / ammo box ex am ple preferred p/n aec-q1 0 1 qu ali fi ed pack i n g code green com pou n d code descri pt i on sr806 a0 a0 sr806 a0g a0 g green compound sr806ha0 h a0 aec-q101 qualified rat i n gs an d ch aract eri st i cs cu rv es 0 2 4 6 8 10 0 50 100 150 average forward current (a) lead temperature ( o c) fig.1- maximum forward current derating curve sr805 - sr820 sr802 - sr804 resistive of inductive load with heatsink 25 50 75 100 125 150 175 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 2- maximum non-repetitive forward surge current 8.3ms single half sine wave jedec method 0.001 0.01 0.1 1 10 0 20 40 60 80 100 120 140 instantaneous reverse current. (ma) percent of rated peak reverse voltage.(%) fig. 4- typical reverse characteristics tj=25 tj=75 tj=125 0.1 1 10 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 instantaneous forward current (a) forward voltage (v) fig. 3- typical forward characteristics sr802 - sr804 sr805-sr806 SR815-sr820 sr809-sr810 pulse width=300 s 1% duty cycle downloaded from: http:///
ret y rt min max min max a 5.00 5.60 0.197 0.220 b 1.20 1.30 0.048 0.052 c 25.40 - 1.000 - d 8.50 9.50 0.335 0.375 e 25.40 - 1.000 - p/n = specific device code g = green compound yww = date code f = factory code document number: ds_d1309011 version: i13 m ark i n g di agram sr802 thru sr820 taiwan semiconductor pack age ou t li n e di m en si on s dim. unit (mm) unit (inch) 100 1000 10000 0.1 1 10 100 junction capacitance (pf) reverse voltage (v) fig. 5- typical junction capacitance sr809-sr820 sr805-sr806 sr802-sr804 f=1.0mhz vslg=50mvp-p 0.1 1 10 100 0.01 0.1 1 10 100 transient thermal impedance ( /w) t, pilse duration. (sec) fig. 6- typical transient thermal characteristics downloaded from: http:///
ret y rt assumes no responsibility or liability for any errors inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1309011 version: i13 sr802 thru sr820 taiwan semiconductor n ot ic e specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, downloaded from: http:///


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